• Part: 2SD797
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 122.43 KB
Download 2SD797 Datasheet PDF
Toshiba
2SD797
2SD797 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES - High Power Dissipation : Pc=200W (Tc=25°C) - High Collector Current : I C=30A INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation ?l-o r ' Junction Temperature Storage Temperature Range SYMBOL Vc BO Vc EO VEBO ic IB ?C T.i T ste ELECTRICAL CHARACTERISTICS (Ta==25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICB0 Emitter Cut-off Current l EBO Collector-Emitter Breakdown Voltage DC Current Gain v (BR) CEO h FE(l) (Note) h FE(2) Collector-Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage v BE(sat) Transition Frequency f T Collector Output Capacitance Cob Switching Time Turn-on Time Storage Time Fall Time fc on tstg tf RATING 100 80 200 175 -65^175 UNIT V V V A A W °C °C 1. BASE 2. EMITTER COLLECTOR (CASE) - 3,...