2SD797
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
- High Power Dissipation
- High Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power amplifier applications.
- High Power switching applications.
- DC-DC converter applications.
- Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
