Datasheet Details
| Part number | 2SD795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SD795-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD795.
| Part number | 2SD795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.92 KB |
| Description | NPN Transistor |
| Datasheet | 2SD795-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 6.0 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 1.5 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A;
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