2SD799
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min.)
- High DC Current Gain
: h FE= 600(Min.) @IC= 2A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Igniter applications.
- High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD799 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power...
