2SD799 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications.
- Part: 2SD799
- Manufacturer: Inchange Semiconductor (official site)
- Size: 206.45 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
SavantIC |
2SD799 | SILICON POWER TRANSISTOR |
Toshiba |
2SD799 | Silicon NPN Transistor |