Datasheet4U Logo Datasheet4U.com

2SD799 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) High DC Current Gain : hFE= 600(Min.) @IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Igniter applications.

High voltage switching applications.

📥 Download Datasheet

Datasheet preview – 2SD799

Datasheet Details

Part number 2SD799
Manufacturer INCHANGE
File Size 206.45 KB
Description NPN Transistor
Datasheet download datasheet 2SD799 Datasheet
Additional preview pages of the 2SD799 datasheet.

📁 Similar Datasheet

  • 2SD799 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD799 - Silicon NPN Transistor (Toshiba)
  • 2SD792 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD794 - NPN Silicon Power Transistors (NEC)
  • 2SD794 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD794A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD796 - High Speed Switching Transistors (Fuji Semiconductors)
  • 2SD797 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD797 - Silicon NPN Transistor (Toshiba)
  • 2SD798 - NPN Transistor (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD799 isc website：www.iscsemi.
Published: |