2SD799 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications.
| Part number | 2SD799 |
|---|---|
| Datasheet | 2SD799-INCHANGE.pdf |
| File Size | 206.45 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD799 | SILICON POWER TRANSISTOR | SavantIC |
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2SD799 | Silicon NPN Transistor | Toshiba |
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