2SD792
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCE0
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Pulse
Collector Power Dissipation @ TC≤90℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~130
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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