2SD799 transistor equivalent, silicon npn transistor.
* High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)
* Monolithic Construction with Built-in Base-
Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
.
HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES
* High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)
* Monolit.
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