2SD799 Datasheet Text
2SD799
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. Features
- High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)
- Monolithic Construction with Built-in Base-
Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
10.5MAX ., _gf3.6±0.2
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
EQUIVALENT CIRCUIT
BASE
SYMBOL v CBO V CEO v EBO ic IB
?C
Tj Tstg
RATING 600 400
5 6 1
UNIT V V V A A
30
W
150
°C
-55M.50 °C...
