2SD818 Datasheet - Toshiba

NPN Transistor

* High Voltage : VCBO =1500V

* Low Saturation Voltage : VCE ( sat )=4V (Typ.)

* High speed : t f =0.5ys (Typ.)

* Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. 3 +0.09 01.0

* 0.03 30.2 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERI

2SD818

89.98 KB

Npn transistor.

📁 Related Datasheet

2SD811 Silicon NPN Transistor (Toshiba)

2SD811 NPN Transistor (INCHANGE)

2SD812 NPN Transistor (INCHANGE)

2SD813 Si NPN Transistor (Panasonic Semiconductor)

2SD814 Silicon NPN Transistor (Panasonic Semiconductor)

2SD814A Silicon NPN Transistor (Panasonic Semiconductor)

2SD817 SILICON POWER TRANSISTOR (SavantIC)

2SD817 NPN Transistor (INCHANGE)

2SD818 Silicon NPN Power Transistor (INCHANGE)

2SD819 NPN Transistor (Toshiba)

TAGS

2SD818 NPN Transistor Toshiba

Image Gallery