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2SD818 - NPN Transistor

Features

  • High Voltage : VCBO =1500V.
  • Low Saturation Voltage : VCE ( sat )=4V (Typ. ).
  • High speed : t f =0.5ys (Typ. ).
  • Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. 3 +0.09 01.0.
  • 0.03 30.2 ±0.2.

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Datasheet Details

Part number 2SD818
Manufacturer Toshiba
File Size 89.98 KB
Description NPN Transistor
Datasheet download datasheet 2SD818 Datasheet

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Full PDF Text Transcription

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2SD818 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO =1500V • Low Saturation Voltage : VCE ( sat )=4V (Typ.) • High speed : t f =0.5ys (Typ.) • Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. 3 +0.09 01.0—0.03 30.2 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE PC T i T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO iEBO DC Current Gain Collector-Emitter Saturation Voltage hFE v CE(sat) _ +0.08 04.
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