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2SD821 - NPN Transistor

Key Features

  • High Voltage : VCBO=1500V.
  • Low Saturation Voltage : VCE (sat)=5V (Max. ) (I C=5A, I B =1A).
  • High Speed : t f =1.0us (Max. ).
  • Glass Passivated Collector-Base Junction. Unit in mm p.
  • 25.0MAX. £21.0 MAX . fQ09 £1.0-003 3Q2±02.

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Datasheet Details

Part number 2SD821
Manufacturer Toshiba
File Size 90.81 KB
Description NPN Transistor
Datasheet download datasheet 2SD821 Datasheet

Full PDF Text Transcription for 2SD821 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD821. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO=1500V • Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=...

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tage : VCBO=1500V • Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A) • High Speed : t f =1.0us (Max.) • Glass Passivated Collector-Base Junction. Unit in mm p*25.0MAX. £21.0 MAX . fQ09 £1.0-003 3Q2±02 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 1500 600 UNIT V V Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Vebo ic IE PC T j T stg ELECTRICAL CHARACTERISTICS CHARACTERISTIC (Ta=25°C) SYMBOL 5V 1. BASE 6A -6 A 2.