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2SD822 - Silicon NPN Transistor

Features

  • High Voltage : Vcbo=1500V.
  • Low Saturation Voltage : V C E(sat)=5V (Max. ) (I C=6A, I B=1.2A).
  • High Speed : t f =1.0 A s (Max. ).
  • Glass Passivated Collector-Base Junction. Unit in mm 025.OUAX2X0MAX +0.09 010-0.03 3Q2±Q2.

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Datasheet Details

Part number 2SD822
Manufacturer Toshiba
File Size 93.33 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD822 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : Vcbo=1500V • Low Saturation Voltage : V C E(sat)=5V (Max.) (I C=6A, I B=1.2A) • High Speed : t f =1.0 A s (Max.) • Glass Passivated Collector-Base Junction. Unit in mm 025.OUAX2X0MAX +0.09 010-0.03 3Q2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 1500 600 UNIT V V Emitter- Base Voltage Collector Current Emitter Current Collector power Dissipation XTc=25°C) Junction Temperature VEBO ic IE ?c Tj 5 V 7 A -7 A 50 W 150 °C 1. BASE 2.
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