2SD822 Datasheet - Toshiba

Silicon NPN Transistor

* High Voltage : Vcbo=1500V

* Low Saturation Voltage : V C E(sat)=5V (Max.) (I C=6A, I B=1.2A)

* High Speed : t f =1.0 A s (Max.)

* Glass Passivated Collector-Base Junction. Unit in mm 025.OUAX2X0MAX +0.09 010-0.03 3Q2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Col

2SD822

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Silicon npn transistor.

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2SD822 Silicon NPN Transistor Toshiba

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