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2SD844 - NPN Transistor

Key Features

  • High Collector Current : I C=7A.
  • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A).
  • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754. I5.9MAX Unit in mm 0Z.2±O.2.

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Datasheet Details

Part number 2SD844
Manufacturer Toshiba
File Size 91.70 KB
Description NPN Transistor
Datasheet download datasheet 2SD844 Datasheet

Full PDF Text Transcription for 2SD844 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD844. For precise diagrams, and layout, please refer to the original PDF.

I: . SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES • High Collector Current : I C=7A • Low Collector Saturat...

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ON. FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754. I5.9MAX Unit in mm 0Z.2±O.2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range SYMBOL VCBO VCEO VEBO ic XE pc Tj Tstg RATING 50 50 5 7 -7 2.5 60 150 -55M.50 UNIT V V V A 1. BASE 2.