2SD844 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation.
2SD844 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD844 | NPN Transistor |
SavantIC |
2SD844 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation.