Datasheet Details
| Part number | 2SD849 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD849-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD849 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD849-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 5 A 25 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD849 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD849 | SILICON POWER TRANSISTOR | SavantIC |
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