Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for line-operated horizontal deflection output...
