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2SD849 - NPN Transistor

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Part number 2SD849
Manufacturer INCHANGE
File Size 199.28 KB
Description NPN Transistor
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High Breakdown Voltage- : VCBO= 1500V (Min) Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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