Datasheet Details
| Part number | 2SD845 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SD845-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD845 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SD845-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB755 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD845 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
Compare 2SD845 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD845 | SILICON POWER TRANSISTOR | SavantIC |
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2SD845 | Silicon NPN Transistor | Toshiba |
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2SD845 | NPN Silicon Power Transistors | MCC |
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