With MT-200 package
Complement to type 2SB755
High transition frequency
High breakdown voltage :VCEO=150V(min)
APPLICATIONS
For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD845
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DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min)
APPLICATIONS ·For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 1.
2SD845 Datasheet
