Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.)
- High Switching Speed
- Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for voltage switching...
