2SD843
DESCRIPTION
- High Collector Current:: IC= 7A
- Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A
- High Collector Power Dissipation
- plement to Type 2SB753
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High current switching applications
- Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
Junction Temperature
1.5 W
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD843 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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