Datasheet Details
| Part number | 2SD843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD843-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD843-INCHANGE.pdf |
|
|
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·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD843 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD843 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD843 | Silicon NPN Transistor | Toshiba |
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