2SD845 - Silicon NPN Transistor

Toshiba

Key Features

High Breakdoun Voltage : Vceo=150V (Min. ).
High Transition Frequency : fx=20MHz (Typ. ).
Complementary to 2SB755.
Recommended for 8011 High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm.

2SD845 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD845
Manufacturer	Toshiba
File Size	91.25 KB
Description	Silicon NPN Transistor
Datasheet	2SD845 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SD845 I SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATION, FEATURES • High Breakdoun Voltage : Vceo=150V (Min.) • High Transition Frequency : fx=20MHz (Typ.) • Complementary to 2SB755. • Recommended for 8011 High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO v EBO L stg RATING UNIT 150 150 12 -12 1, BASE 2. COLLECTOR(HEAT SINK) a, EMITTER 120 150 -55M.50 TOSHIBA 2 — 34 A 1A Weight : 10.