Datasheet Summary
21 I
SILICON NPN TRIPLE DIFFUSED MESA TYPE
HIGH VOLTAGE SWITCHING APPLICATIONS-
Features
: . High Voltage : VCB0=800V . Low VcE(sat) : VCE ( sat )=l .OV(Max. ) ( C =0. 5A. B =0.05A) . High Speed Switching : tf=1.0/is (Max.)
. Glass Passivated Collector-Base Junction.
Unit in mm
10.3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
2.5 4
2.5 4
Emitter-Base Voltage Collector Current vEBO
12:; ic
"U ^ --
- i
Base Current
Collector Power Dissipation
Ta=25°C ?c
Tc=25°C
- 40
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TO- 220AB
Junction...
