. High Voltage : VCB0=800V . Low VcE(sat) : VCE ( sat )=l . OV(Max. ) ( C =0. 5A. B =0.05A) . High Speed Switching : tf=1.0/is (Max. )
. Glass Passivated Collector-Base Junction. Unit in mm
10.3MAX. 03.6±O.2.
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21 I
I
SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD841
HIGH VOLTAGE SWITCHING APPLICATIONS-
FEATURES: . High Voltage : VCB0=800V . Low VcE(sat) : VCE ( sat )=l .OV(Max. ) ( C =0. 5A. B =0.05A) . High Speed Switching : tf=1.0/is (Max.)
. Glass Passivated Collector-Base Junction.
Unit in mm
10.3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
800
V
400
V
2.5 4
X
2.5 4
Emitter-Base Voltage Collector Current
vEBO
5
V
12:;
ic
3
A
"U ^ -*-
i
Base Current
Collector Power Dissipation
IB
Ta=25°C ?c
Tc=25°C
1.5
A
1.5
¥
40
1. BASE 2. COLLECTOR (HEAT SINK) 3.
2SD841 Datasheet
