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I
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Saturation Voltage : VC E(sat)=0.5V (Max.) (at I C=4A)
• Complementary to 2SB753.
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX. 0Z.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
SYMBOL V CBO 'CEO v EBO
PC
RATING 100 80
1.5 40
150
UNIT
2.54
X
<
k,.54
S
d
123
| CD
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TO - 22 0AB
Storage Temperature Range
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
-55^150
TOSHIBA
2 —10 A 1 A
Mounting Kit No, AC75
Weight : 1.9g
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
2SD843 Datasheet
