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2SD868 - NPN Transistor

Key Features

  • . High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A).
  • Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0.
  • 0.03 TTT 30.2±0.2 MAX I MUn.

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Datasheet Details

Part number 2SD868
Manufacturer Toshiba
File Size 106.35 KB
Description NPN Transistor
Datasheet download datasheet 2SD868 Datasheet

Full PDF Text Transcription for 2SD868 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD868. For precise diagrams, and layout, please refer to the original PDF.

:) SILICON NPN TRIPLE DIFFUSED MESA TYPE 3 2SD868 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ...

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. High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A) • Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0—0.03 TTT 30.2±0.2 MAX I MUn RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature EQUIVALENT CIRCUIT BASE o- SYMBOL VcBO VcEO VeBO ic IE RATING 1500 600 2.5 -2.5 PC 50 150 -stg -65~150 COLLECTOR UNIT 1. BASE 2.