2SD868 - NPN Transistor

Toshiba

Datasheet Details

. High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A).
Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0.
0.03 TTT 30.2±0.2 MAX I MUn.

📁 2SD868 Similar Datasheet

2SD860 - Power Transistor (Inchange Semiconductor)
2SD861 - Silicon NPN Transistor (Inchange Semiconductor)
2SD862 - NPN Transistor (INCHANGE)
2SD863 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD864 - Power Transistor (Inchange Semiconductor)
2SD866 - SILICON POWER TRANSISTOR (SavantIC)
2SD866A - SILICON POWER TRANSISTOR (SavantIC)
2SD800 - NPN Transistor (INCHANGE)

Other Datasheets by Toshiba

Published: Jul 16, 2018 |