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2SD868 - NPN Transistor

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Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in co

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Datasheet Details

Part number 2SD868
Manufacturer INCHANGE
File Size 202.34 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 1.
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