2SD860 datasheet by Inchange Semiconductor.
| Part number | 2SD860 |
|---|---|
| Datasheet | 2SD860_InchangeSemiconductor.pdf |
| File Size | 213.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD860 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown...
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