Datasheet Details
| Part number | 2SD897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.47 KB |
| Description | Power Transistor |
| Datasheet | 2SD897_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD897.
| Part number | 2SD897 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.47 KB |
| Description | Power Transistor |
| Datasheet | 2SD897_InchangeSemiconductor.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 1.5 A ICM Collector Current- Peak 5.0 A IB Base Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 0.8 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-Base Breakdown Voltage IE= 200mA;
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