Datasheet4U Logo Datasheet4U.com

2SD861 - Silicon NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High Power Dissipation- : PC= 45W@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD862 NPN Transistor INCHANGE
2SD863 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD866 SILICON POWER TRANSISTOR SavantIC
2SD866 NPN Transistor INCHANGE
2SD866A SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD860 Power Transistor
2SD864 Power Transistor
2SD873 Power Transistor
2SD879 Silicon NPN Transistor
2SD897 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD861 isc website：www.iscsemi.