Datasheet Details
| Part number | 2SD861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SD861-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD861 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SD861-InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD861 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Part Number | Description |
|---|---|
| 2SD860 | Power Transistor |
| 2SD864 | Power Transistor |
| 2SD873 | Power Transistor |
| 2SD879 | Silicon NPN Transistor |
| 2SD897 | Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |