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2SD879 - Silicon NPN Transistor

General Description

High Collector Current-IC= 3.0A Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse）

Current to High Current.

In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are us

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse） ·Excellent Linearity of hFE in The Region From Low Current to High Current. APPLICATIONS ·In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VCEX Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse 5.0 A PC Collector Power Dissipation 1.