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2SD879 - Silicon NPN Transistor

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Part number 2SD879
Manufacturer Inchange Semiconductor
File Size 134.50 KB
Description Silicon NPN Transistor
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Description

High Collector Current-IC= 3.0A Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse） Excellent Linearity of hFE in The Region From Low Current to High Current.APPLICATIONS In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VCEX Collector-Emitter Voltage 20 V VEBO Emitter-B

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