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2SD879 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for use in 1.5V and 3V electronic flash.

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Datasheet Details

Part number 2SD879
Manufacturer Dc Components
File Size 210.87 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet 2SD879 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SD879 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1.5V and 3V electronic flash. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEX VCEO 20 10 Emitter-Base Voltage VEBO 6 Collector Current (DC) IC 3 Collector Current (pulse) IC 5 Total Power Dissipation PD 750 Junction Temperature TJ +150 Storage Temperature TSTG -55 to +150 Unit V V V V A A mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ (1.0.2570)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp.