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2SD879 Datasheet PDF

Unisonic Technologies 2SD879

2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.
Part No. 2SD879
Datasheet 2SD879 Download
Manufacturer
Unisonic Technologies
Description NPN EPITAXIAL SILICON TRANSISTOR
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2SD879 datasheet page 1 preview

APPLICATIONS

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DESCRIPTION

The UTC
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FEATURES

* In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors. * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted. * Large current capacity and highly resistant to break-down. * Excellent linearity of hFE in the region from low current to high current.
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SD879G-AB3-R 2SD879L-T92-B 2SD879G-T92-B 2SD879L-T92-K 2SD879G-T92-K Note: Pin Assignment: E: Emitter C: Collector Package SOT-89 TO-92 TO-92 B: Base Pin Assignment 123 BCE ECB ECB Packing Tape Reel Tape Box Bulk
● MARKING SOT-89 TO-92 Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-010.C 2SD879 NPN EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING ( TA=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Colle...
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