2SD864 - Power Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A Complement to Type 2SB765 Minimum Lot-to-Lot variations for robust device performance and

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Datasheet Details

Part number	2SD864
Manufacturer	Inchange Semiconductor
File Size	211.15 KB
Description	Power Transistor
Datasheet	2SD864 Datasheet

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isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.