Datasheet Details
| Part number | 2SD869 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD869-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD869 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD869-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IE Emitter Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD869 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-Base Breakdown Voltage IE= 200mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD869 | NPN Transistor | Toshiba |
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2SD869 | SILICON POWER TRANSISTOR | SavantIC |
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