2SD869 - NPN Transistor

Toshiba

Key Features

High Voltage : VCBQ=1500V .
Low Saturation Voltage : V CE(sat) =5V (Typ. ) (I C =3A, I B =0.8A).
High Speed : tf=1.0ys (Max. ) (I CP=3A, I B l(end)=0.8A).
Built-in Danper Type.
Glass Passivated Collector-Base Junction.

2SD869 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD869
Manufacturer	Toshiba
File Size	112.76 KB
Description	NPN Transistor
Datasheet	2SD869 Datasheet

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Full PDF Text Transcription (Reference)

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2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBQ=1500V .• Low Saturation Voltage : V CE(sat) =5V (Typ.) (I C =3A, I B =0.8A) • High Speed : tf=1.0ys (Max.) (I CP=3A, I B l(end)=0.8A) • Built-in Danper Type. • Glass Passivated Collector-Base Junction. MAXIMUM RATINGS (Ta=25°fn CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VCBO v CEO VEBO ic IE RATING 1500 600 3.5 -3.5 50 150 T stg -65^150 COLLECTOR INDUSTRIAL APPLICATIONS Unit in mm JEDEC TO - 3 EIAJ TC — 3, TB — 3 TOSHIBA 2-2 1B1A Mounting Kit No.