Datasheet4U Logo Datasheet4U.com

2SD866 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applicat

📥 Download Datasheet

Datasheet preview – 2SD866

Datasheet Details

Part number 2SD866
Manufacturer INCHANGE
File Size 210.34 KB
Description NPN Transistor
Datasheet download datasheet 2SD866 Datasheet
Additional preview pages of the 2SD866 datasheet.

📁 Similar Datasheet

  • 2SD866 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD866A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD860 - Power Transistor (Inchange Semiconductor)
  • 2SD861 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD863 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD864 - Power Transistor (Inchange Semiconductor)
  • 2SD867 - NPN Transistor (Toshiba)
  • 2SD868 - NPN Transistor (Toshiba)
  • 2SD868 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD869 - NPN Transistor (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD866 isc website：www.iscsemi.
Published: |