2SD869 Datasheet - Toshiba

NPN Transistor

* High Voltage : VCBQ=1500V .

* Low Saturation Voltage : V CE(sat) =5V (Typ.) (I C =3A, I B =0.8A)

* High Speed : tf=1.0ys (Max.) (I CP=3A, I B l(end)=0.8A)

* Built-in Danper Type.

* Glass Passivated Collector-Base Junction. MAXIMUM RATINGS (Ta=25°fn CH

2SD869

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Npn transistor.

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2SD869 NPN Transistor Toshiba

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