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2SD869 - NPN Transistor

Key Features

  • High Voltage : VCBQ=1500V .
  • Low Saturation Voltage : V CE(sat) =5V (Typ. ) (I C =3A, I B =0.8A).
  • High Speed : tf=1.0ys (Max. ) (I CP=3A, I B l(end)=0.8A).
  • Built-in Danper Type.
  • Glass Passivated Collector-Base Junction.

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Datasheet Details

Part number 2SD869
Manufacturer Toshiba
File Size 112.76 KB
Description NPN Transistor
Datasheet download datasheet 2SD869 Datasheet

Full PDF Text Transcription for 2SD869 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD869. For precise diagrams, and layout, please refer to the original PDF.

2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBQ=1500V .• Low Saturation Voltage : V CE(sat) =5V (Typ....

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h Voltage : VCBQ=1500V .• Low Saturation Voltage : V CE(sat) =5V (Typ.) (I C =3A, I B =0.8A) • High Speed : tf=1.0ys (Max.) (I CP=3A, I B l(end)=0.8A) • Built-in Danper Type. • Glass Passivated Collector-Base Junction. MAXIMUM RATINGS (Ta=25°fn CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VCBO v CEO VEBO ic IE RATING 1500 600 3.5 -3.5 50 150 T stg -65^150 COLLECTOR INDUSTRIAL APPLICATIONS Unit in mm JEDEC TO - 3 EIAJ TC — 3, TB — 3 TOS