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2SD870 - NPN Transistor

Key Features

  • High Voltage : V CBO=1500V.
  • Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A).
  • High Speed ; tf=1.0ys (Max. ) (I C p=4A, I B i (end)=0. 8A).
  • Built-in Damper Type.
  • Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr.

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Datasheet Details

Part number 2SD870
Manufacturer Toshiba
File Size 111.73 KB
Description NPN Transistor
Datasheet download datasheet 2SD870 Datasheet

Full PDF Text Transcription for 2SD870 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD870. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD870 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Ma...

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igh Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A) • High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A) • Built-in Damper Type. • Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO VCEO VEBO IC Tj x stg RATING 1500 600 UNIT V -5 50 150 -65VL50 °C 1. BASE 2. EMITTER COL