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2SD870 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV

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Datasheet Details

Part number 2SD870
Manufacturer INCHANGE
File Size 183.12 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD870 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IE Emitter Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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