2SD870 - NPN Transistor

Toshiba

Key Features

High Voltage : V CBO=1500V.
Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A).
High Speed ; tf=1.0ys (Max. ) (I C p=4A, I B i (end)=0. 8A).
Built-in Damper Type.
Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr.

2SD870 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD870
Manufacturer	Toshiba
File Size	111.73 KB
Description	NPN Transistor
Datasheet	2SD870 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD870 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : V CBO=1500V • Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A) • High Speed ; tf=1.0ys (Max.) (I C p=4A, I B i (end)=0. 8A) • Built-in Damper Type. • Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO VCEO VEBO IC Tj x stg RATING 1500 600 UNIT V -5 50 150 -65VL50 °C 1. BASE 2. EMITTER COLLECTOR(CASE) TO-3 TC-3, TB-3 Mounting kit No.