2SK18
2SK18 is Silicon N-Channel Transistor manufactured by Toshiba.
:
SILICON N CHANNEL JUNCTION DUAL TYPE (PLETELY SEPARATED TYPE)
DIFFERENTIAL AMPLIFIER APPLICATIONS. Features
- Low Offset : Vg S1"Vg S2 =10m V (Max.)
- Good Tracking
: ^|VGSl-VGS2|/^Ta=20/t V/°C .(Max.). (2SK18A)
- High Input Impedance : Ic=-100p A (Max.) at VDs=10V, ID=400y A.
- Similar Characteristics as 2SK15.
2SK18 2SK18A
CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
1. SOURCE (1) 2. GATE (1) S DRAIN (1) 4, DRA IN (2)
5 OATE (2) 6 SOURCE (2) 7. CASE
- SYMBOL VGDS IG PD
Tj
Tstg
RATING -40 10 200 150
-65VL50
UNIT V m A m W °C °C
TOSHIBA
- 9C 1 A
Weight : 0.90g
PIN CONNECTION (BOTTOM VIEW)
-659-
2SK18 2SK18A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current Gate-Drain Breakdown Voltage
Drain Current Gate-Source Cut-off Voltage Forward Iranster...
