| Description | : SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation J... |
| Features |
• Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range 1. SOURCE (1) 2.... |
| Datasheet |
 2SK18A Datasheet - 55.10KB |
