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2SK358 - N-Channel Transistor

Toshiba

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Datasheet Details

Part number	2SK358
Manufacturer	Toshiba
File Size	131.87 KB
Description	N-Channel Transistor
Datasheet	2SK358-Toshiba.pdf

2SK358 Product details

Features

. Low Drain-Source ON Resistance : RD g (qn) = 0- 7fi (Typ . . High Forward Transfer Admittance: lYf s l=2.3S (Typ. ) . High Drain Current : Idp=8A (Max. ) . Low Leakage Current: IGSS =±100nA (Max. ) @ VG s=±20V . Enhancement-Mode I DSS=lmA (Max. ) @ V DS=250V : V t h=1.5~3.5V @ Io=lmA.

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Published: Jul 16, 2018 |