* . Low Drain-Source ON Resistance : RD g (qn) = 0- 7fi (Typ . . High Forward Transfer Admittance: lYf s l=2.3S (Typ.) . High Drain Current : Idp=8A (Max.) . Low Leakage Current: IGSS =±100nA (Max.) @ VG s=±20V . Enhancement-Mode I DSS=lmA (Max.) @ V DS=250V : V t h=1.5~3.5V @ Io=lmA INDU
2SK358
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N-channel transistor.
: 2SK358 ) SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIO.
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