Datasheet4U Logo Datasheet4U.com

2SK418 - N-Channel Transistor

Key Features

  • . High Breakdown Voltage : V(BR)DSS= 400V . High Forward Transfer Admittance : lYf s ]=1.2S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode IDS S= 1mA (Max. ) @ VD s=400V : Vth= l-5 ~ 3.5V @ In=lmA.

📥 Download Datasheet

Datasheet Details

Part number 2SK418
Manufacturer Toshiba
File Size 41.75 KB
Description N-Channel Transistor
Datasheet download datasheet 2SK418 Datasheet

Full PDF Text Transcription for 2SK418 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK418. For precise diagrams, and layout, please refer to the original PDF.

SILICON N CHANNEL MPS TYPE (7T-MOS) 2SK41 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES .Hi...

View more extracted text
REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES .High Breakdown Voltage : V(BR)DSS= 400V . High Forward Transfer Admittance : lYf s ]=1.2S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode IDS S= 1mA (Max.) @ VD s=400V : Vth= l-5 ~ 3.5V @ In=lmA INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage SYMBOL VDSX VGSS RATING 400 ±20 UNIT V Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID Idp Pd Tch T stg ELECTRICAL CHARACTERISTICS (Ta=25°C). L OATE 2. DRAIN (H