A1296 Datasheet - Toshiba

A1296 2SA1296

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications 2SA1296 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC <.

A1296-Toshiba.pdf