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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2182
Power Amplifier Applications Driver Stage Amplifier Applications
High transition frequency: fT = 80 MHz (typ.)
2SA2182
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
− 230
V
Collector-emitter voltage
VCEO
− 230
V
Emitter-base voltage
VEBO
−5
V
Collector current Base current
DC pulse
IC
− 1.0
A
ICP
− 2.0
A
IB
− 100
mA
1 : BASE 2 : COLLECTOR 3 : EMITTER
Ta = 25°C
Collector power dissipation
PC
Tc = 25°C
Junction temperature
Tj
Storage temperature range
Tstg
2
W
20
W
150
°C
− 55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.
A2182 Datasheet
