A2183
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
- Low collector-emitter saturation : VCE(sat) =
- 1.0 V（max）
2SA2183
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 60 V
Collector-emitter voltage
VCEO
- 60 V
Emitter-base voltage
VEBO
- 7 V
Collector current
DC Pulse
IC ICP
- 5.0
- 8.0
Base current
- 0.5
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Tj Tstg
2 20 150
- 55 to 150
W W °C...
