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A2182 - Silicon PNP Transistor

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Datasheet Details

Part number A2182
Manufacturer Toshiba
File Size 166.42 KB
Description Silicon PNP Transistor
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Full PDF Text Transcription

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 80 MHz (typ.) 2SA2182 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO − 230 V Collector-emitter voltage VCEO − 230 V Emitter-base voltage VEBO −5 V Collector current Base current DC pulse IC − 1.0 A ICP − 2.0 A IB − 100 mA 1 : BASE 2 : COLLECTOR 3 : EMITTER Ta = 25°C Collector power dissipation PC Tc = 25°C Junction temperature Tj Storage temperature range Tstg 2 W 20 W 150 °C − 55~150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.7 g (typ.
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