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Toshiba Electronic Components Datasheet

A2183 Datasheet

Silicon PNP Epitaxial Type Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = 1.0 Vmax
2SA2183
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
Pulse
IC
ICP
5.0
8.0
A
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
Tj
Tstg
2
20
150
55 to 150
W
W
°C
°C
1 : Base
2 : Collector
3 : Emitter
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10U1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16


Toshiba Electronic Components Datasheet

A2183 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Rise time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
tr
tstg
tf
VCB = 60 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 53 mA
IC = 1.6 A, IB = 53 mA
VCE = 10 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram
VCC30V,RL=18.75Ω
IB1 = 53 mA, IB2 = 53 mA,
2SA2183
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
60 ― ― V
200 500
100
― ― −1.0 V
― ― −1.5 V
170 MHZ
38 pF
100
300
60
ns
Figure 1 Switching Time Test Circuit & Timing Chart
IB2
IB1
20μs
Duty cycle 1%
Input
IB1
IB2
VCC
Output
Marking
2SA2183
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-16


Part Number A2183
Description Silicon PNP Epitaxial Type Transistor
Maker Toshiba
PDF Download

A2183 Datasheet PDF






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