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Toshiba Electronic Components Datasheet

BAV99 Datasheet

Silicon Epitaxial Planar Switching Diodes

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Switching Diodes Silicon Epitaxial Planar
BAV99
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
BAV99
1: Anode 1
2: Cathode 2
3: Cathode 1/Anode 2
SOT23
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
Reverse voltage
VRM
VR
100 V
100
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
IFM
IO
IFSM
(Note 1)
(Note 2)
(Note 3)
500 mA
215 mA
2A
Power dissipation
PD
(Note 4)
150 mW
320
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 40%
Note 2: Unit rating. Total rating = Unit rating × 55%
Note 3: Measured with a 10 ms pulse.
Note 4: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.42 mm2 × 3)
©2016 Toshiba Corporation
1
Start of commercial production
2016-08
2016-10-20
Rev.1.0


Toshiba Electronic Components Datasheet

BAV99 Datasheet

Silicon Epitaxial Planar Switching Diodes

No Preview Available !

4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
VF (4)
IR (1)
IR (2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA, See Fig. 4.1.
Min
Typ.
0.9
BAV99
Max
0.715
0.855
1.0
1.25
30
200
3.0
Unit
V
nA
pF
ns
5. Marking
Fig. 4.1 Reverse recovery time (trr) Test circuit
6. Land Pattern Dimensions (for reference only)
©2016 Toshiba Corporation
SOT23 (Unit: mm)
2
2016-10-20
Rev.1.0


Part Number BAV99
Description Silicon Epitaxial Planar Switching Diodes
Maker Toshiba
Total Page 5 Pages
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