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BU126 - Silicon NPN Transistor

Key Features

  • . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max. ) at Ic=4A, Ifi=lA.
  • High speed : tf=0.15ys (Typ. ) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0.
  • a 03 TJT-l- 30.2±Q2.

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Datasheet Details

Part number BU126
Manufacturer Toshiba
File Size 57.28 KB
Description Silicon NPN Transistor
Datasheet download datasheet BU126 Datasheet

Full PDF Text Transcription for BU126 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BU126. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES ...

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E IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA • High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0—a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Current DC Peak VCES VCEX (-V BE =1.5V VCEO IC ICM -ICM RATING 750 750 300 UNIT 1. BASE 2. EMITTER COLLECTOR ^CASE) TO — TOSHIBA TC— 3 , TB— 2— 21B1A Mounting Kit No. AC42C Weight : 17.0g DC IB Base Current Peak IBM _I B(AV) 100 (DC or averaged over any 20mS period) mA -IBM