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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU126
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DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter,switching mode power supply applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 750 300 3.0 6.0 2.0 40 125 -65~125 UNIT V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.