BU126 Datasheet and Specifications PDF

The BU126 is a Silicon NPN Transistor.

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Part NumberBU126 Datasheet
ManufacturerToshiba
Overview : SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES . High Breakdown Voltage : V. . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA
* High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0
*a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Curr.
Part NumberBU126 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter,switching mode power supply applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified o. votage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency Fall time CONDITIONS IC=0.1A; IB=0; IE=1mA; IC=0 IC=2.5 A;IB=0.25A IC=4 A;IB=1A .
Part NumberBU126 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 300V(Min.) ·Collector Current- IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo. ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 300 V V(BR)EBO Collector-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2..

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