Datasheet4U.com

BU126 - Silicon NPN Transistor

Product Overview

Toshiba

📥 Download Datasheet

BU126 Silicon NPN Transistor by Toshiba - Datasheet Preview — Datasheet preview – BU126

Datasheet Details

Part number	BU126
Manufacturer	Toshiba
File Size	57.28 KB
Description	Silicon NPN Transistor
Datasheet	BU126 Datasheet
Additional preview pages of the BU126 datasheet.

Product details

Features

. High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max. ) at Ic=4A, Ifi=lA.
High speed : tf=0.15ys (Typ. ) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0.
a 03 TJT-l- 30.2±Q2.

📁 Similar Datasheet

BU120 - Silicon NPN Power Transistor (Inchange Semiconductor)
BU1206 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
BU1206-E3 - Bridge Rectifiers (Vishay)
BU1206-M3 - Bridge Rectifiers (Vishay)
BU1208 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
BU1208-E3 - Bridge Rectifiers (Vishay)
BU1208-M3 - Bridge Rectifiers (Vishay)
BU1210 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)

Other Datasheets by Toshiba

Published: Jul 16, 2018 |