BU126
BU126 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : Vc ES = 750V . Low Saturation Voltage
: V CE ( sat )=5V(Max.) at Ic=4A, Ifi=l A
- High speed : tf=0.15ys (Typ.)
Unit in mm s025OMAX.
Zfel.0 MAX.
, +ao9 01.0- a 03
TJT-l-
30.2±Q2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Emitter Voltage
Collector Current
DC Peak
VCES VCEX (-V BE =1.5V VCEO IC
-ICM
RATING 750 750 300
UNIT
1. BASE 2. EMITTER
COLLECTOR ^CASE)
- TOSHIBA
TC- 3 , TB- 2- 21B1A
Mounting Kit No. AC42C
Weight : 17.0g
DC IB
Base Current
Peak
_I B(AV)
(DC or averaged over any 20m S period) m A
-IBM
Total Collector Power Dissipation (Tc=25°C)
Junction Temperature
(turn-off current) tot 50 150
Storage Temperature Range Thermal...
