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BU326A - Silicon NPN Transistor

Key Features

  • . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A.
  • Fall Time : tf=0.5/»s (Max. ) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX.

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Datasheet Details

Part number BU326A
Manufacturer Toshiba
File Size 116.99 KB
Description Silicon NPN Transistor
Datasheet download datasheet BU326A Datasheet

Full PDF Text Transcription for BU326A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BU326A. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A • ...

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Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A • Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO VCEO Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation (Tc=25°C) 'EBO ic ICP PC Junction Temperature Storage Temperature Range L stg RATING 900 400 60 150 -65-150 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO— TC— 3, TB— 2-2 1B1A Mounting Kit No. AC42C Weight : 17.